〈Transistor〉
DEVELOPING
2SC5814，2SC5815，2SC5816，2SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
COMMON EMITTER OUTPUT
30
IB=160uA
IB=140uA
IB=120uA
IB=100uA
IB=80uA
Ta=25℃
COMMON EMITTER TRANSFER
50
Ta=25℃
VCE=6V
20
COLLERCTOR CURRENT IC[mA]
25
COLLECTOR CURRENT IC[mA]
40
30
15
IB=60uA
IB=40uA
20
10
IB=20uA
5
IB=0A
10
0
0
1
2
3
4
COLLECTOR TO EMITTER VOLTAGE VCE[V]
5
0
0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE[V]
1
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
1000
Ta=25℃
VCE=6V
COLLECTOR-EMITTER SATURATION VOLTAGE
VS COLLECTOR CURRENT
1000
Ta=25℃
IC/IB=20/1
RELATIVE VALUE OF DC
FORWARD CURRENT GAIN hFE
100(@IC=1mA)
100
COLLECTOR-EMITTER SATURATION
VOLTAGE
VCE(sat)[mV]
100
100
10
10
1
0.1
1
10
COLLECTOR CURRENT IC[mA]
1
0.1
1
10
COLLECTOR CURRENT IC[mA]
100
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
250
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
Ta=25℃
VCE=6V
COLLERCTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0A
f=1MHz
GAIN BAND WIDTH PRODUCT fT[MHz]
200
10
150
100
1
50
0
-0.1
0.1
-1
-10
EMITTER CURRENT IE[mA]
-100
0.1
1
10
COLLECTOR TO BASE VOLTAGE VCB[V]
100
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
