〈
SMALL-SIGNAL TRANSISTOR
〉
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.
DESCRIPTION
2SC5804 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
0.4
Complementary with 2SC3052.
①
②
③
0.2
0.8
0.2
2SC5804
FOR LOW
FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit
：�½��½�
● Super-thin flat lead type package. t=0.45mm
● Excellent linearly of DC forward current gain.
● Low collector to emitter saturation voltage
0.45
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
0.4
FEATURE
1.2
0.8
JEITA
：
Ratings
50
6
50
200
100
＋125
-55∼＋125
Unit
V
V
V
mA
mW
℃
℃
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
TERMINAL CONNECTER
①
：BASE
②
：EMITTER
③
：COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃
）
Limits
Min
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I
C
=100μA, R
V
V
V
V
CB
EB
BE
0.25
Typ
―
-
-
※
-
-
-
-
-
-
200
2.5
-
Max
―
0.1
0.1
800
-
0.3
-
-
15
V
μA
μA
-
-
v
MHz
pF
dB
=∞
50
-
-
150
90
=50V, I
E
=0mA
=6V, I
C
=0mA
=6V, I
C
=1mA
=6V, I
C
=0.1mA
=6V, I
E
=-10mA
=6V, I
E
=0mA,f=1MHz
CE
CE
I
C
=100mA, I
B
=10mA
V
V
V
CE
CB
CE
=6V, I
E
=-0.1mA,f=1kHz,RG=2kΩ
※ It shows hFE classification in below table.
Item
hFE
Abbrivation
E
150∼300
LE
F
250∼500
LF
G
400∼800
LG
ISAHAYA
ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
