〈
SMALL-SIGNAL TRANSISTOR
〉
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change.
DESCRIPTION
2SC5727 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high frequency application.
.
0.425
2.1
1.25 0.425
2SC5727
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit
：�½��½�
2.0
1.30
0.65 0.65
①
②
③
FEATURE
● High gain bandwidth product.
fT=10.0GHz
●High gain, low noise.
●Can operate at low voltage.
0.9
0.7
●Super mini package for easy mounting
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
JEITA
：SC-70
TERMINAL CONNECTER
①
：BASE
Ratings
15
6
1.5
50
125
＋125
-55∼＋125
Unit
V
V
V
mA
mW
℃
℃
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
②
：EMITTER
③
：COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃
）
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Symbol
I
CBO
I
EBO
hFE
fT
Cob
|S
21
|
2
NF
V
V
V
V
V
V
V
CB
EB
0∼0.1
0.15
Limits
Min
-
-
30
-
-
10.0
-
Typ
-
-
-
10.0
0.7
13.0
1.4
Max
1.0
1.0
250
-
-
-
-
GHz
pF
dB
dB
Test conditions
=10V, I
E
=0mA
0.3
Unit
μA
μA
=1V, I
C
=0mA
=3V, I
C
=10mA
=3V, I
E
=10mA
=3V, I
E
=0mA,f=1MHz
CE
CE
CB
CE
=3V, I
C
=10mA,f=1GHz
=3V, I
C
=5mA,f=1GHz
CE
ISAHAYA
ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
