〈SMALL-SIGNAL TRANSISTOR〉
2SC5636
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
VS. COLLECTOR CURRENT
1000.0
Ta=25℃
V
CE
=5V
10.0
Ta=25℃
V
CE
=3V
100.0
10.0
0.1
1.0
10.0
IC(mA)
1.0
100.0
1.0
10.0
COLLECTOR CURRENT
IC(mA)
100.0
COLLECTOR CURRENT
POWER GAIN VS. COLLECTOR CURRENT
POWER GAIN VS. COLLECTOR CURRENT
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
100.0
IC(mA)
20.0
Ta=25℃
V
CE
=3V
18.0
16.0
14.0
f= 1.0GHz
12.0
10.0
f= 2.0GHz
8.0
6.0
4.0
2.0
0.0
1.0
10.0
COLLECTOR CURRENT
Ta=25℃
V
CE
=1V
f=1.0GHz
f=2.0GHz
1.0
10.0
COLLECTOR CURRENT
IC(mA)
100.0