〈SMALL-SIGNAL TRANSISTOR〉
2SC5633
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5633 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high voltage application.
OUTLINE DRAWING
4.6 MAX
1.6
1.5
Unit：½½
E
C
0.53
MAX
B
FEATURE
● Low collector to emitter saturation voltage.
VCE(sat)=0.5V max
0.8 MIN
4.2 MAX
2.5
0.4
0.48 MAX
1.5
3.0
MARKING
●Super mini package for easy mounting
TERMINAL CONNECTER
APPLICATION
For Hybrid IC, DC-DC converter
Ｅ: EMITTER
Ｃ: COLLECTOR
Ｂ: BASE
EIAJ : SC-62
JEDEC :
Note)
The dimension without tolerance represent central value.
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
300
300
7
100
500
＋150
-55½＋150
Unit
V
V
V
mA
mW
℃
℃
MARKING
TYPE NAME
Ａ Ｊ
Ｑ
LOT No.
½
ＦＥ
ITEM
Test conditions
Limits
Min
300
7
300
-
-
60
-
-
-
Typ
-
-
-
-
-
-
-
40
3.0
Max
-
-
-
0.5
0.5
305
0.5
-
-
V
MHz
pF
Unit
V
V
V
μA
μA
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
VCE(sat)
fT
Cob
I
C
=50μA ,I
E
=0
I
E
=50μA ,I
C
=0
I
C
=1mA ,R
V
V
V
CB
EB
BE
=∞
=300V, I
E
=0mA
=5V, I
C
=0mA
=10V, I
C
=10mA
=6V, I
E
=-10mA
=6V, I
E
=0,f=1MHz
CE
I
C
=100mA ,I
B
=10mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
