2SC5621
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5621 is a super mini package resin sealed silicon NPN
epitaxial transistor.
It is designed for high frequency voltage application.
0.5
0.22
①
③
0.32
0.35
OUTLINE DRAWING
1.5
0.8
0.35
Unit:½½
1.7
1.0
0.7
FEATURE
・High gain bandwidth product. f
T=
4.5GHz
・High gain, low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
0.5
②
For TV tuners, High frequency voltage amplifier,
Cellular phone system
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
JEITA:SC-75A
MAXIMUM RATINGS(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
20
12
3
50
100
+150
-55½+150
Unit
V
V
V
mA
mW
℃
℃
TYPE NAME
h
FE
ITEM
0½0.1
APPLICATION
0.55
MARKING
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
I
CBO
I
EBO
h
FE
f
T
Cob
|S
21
|
2
NF
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Test conditions
V
CB
=10V, I
E
=0mA
V
EB
=1V, I
C
=0mA
V
CE
=5V , I
C
=20mA
V
CE
=5V, I
E
=20mA
V
CB
=5V, I
E
=0mA , f=1MHz
V
CE
=5V, I
C
=20mA , f=1GHz
V
CE
=5V, I
C
=5mA , f=1GHz
Limits
Min
-
-
50
-
-
7.5
-
Typ
-
-
-
4.5
1.0
9.0
1.5
Max
1.0
1.0
250
-
-
-
-
Unit
μA
μA
-
GHz
pF
dB
dB
ISAHAYA ELECTRONICS CORPORATION
0.12
G W