2SC5619
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC5619 is a super mini package resin sealed silicon NPN
epitaxial transistor.
It is designed for high frequency voltage application.
0.95
0.4
0.65
OUTLINE DRAWING
2.8
1.5
0.65
Unit：½½
①
②
③
2.8
1.90
1.1
FEATURE
・High gain bandwidth product. f
T=
4.5GHz
・High gain, low noise.
・Can operate at low voltage.
・Super mini package for easy mounting.
0.95
For TV tuners, High frequency voltage amplifier,
Cellular phone system
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-59
JEDEC：Similar to TO-236
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
20
12
3
50
150
＋150
-55½＋150
Unit
V
V
V
mA
mW
℃
℃
TYPE NAME
h
FE
ITEM
0½0.1
APPLICATION
0.8
MARKING
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
I
CBO
I
EBO
h
FE
f
T
Cob
|S
21
|
2
NF
Parameter
Collector cut off current
Emitter cut off current
DC forward current gain
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
Test conditions
V
CB
=10V, I
E
=0mA
V
EB
=1V, I
C
=0mA
V
CE
=5V , I
C
=20mA
V
CE
=5V, I
E
=20mA
V
CB
=5V, I
E
=0mA , f=1MHz
V
CE
=5V, I
C
=20mA , f=1GHz
V
CE
=5V, I
C
=5mA , f=1GHz
Limits
Min
-
-
50
-
-
7.5
-
Typ
-
-
-
4.5
1.0
9.0
1.5
Max
0.5
1.0
250
-
-
-
-
Unit
μA
μA
-
GHz
pF
dB
dB
ISAHAYA ELECTRONICS CORPORATION
0.13
G W
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
