〈Transistor〉
2SC5547
For High Frequency Amplify Application
Silicon NPN Epitaxial Type
DESCRIPTION
2SC5547 is SC-62(SOT-89) package
resin sealed silicon NPN epitaxial transistor.
It is designed for high frequency application.
OUTLINE DRAWING
UNIT:mm
4.6 MAX
1.6
1.5
FEATURE
�½�High gain bandwidth product. fT=4.5GHz
�½�High gain,low noise
�½�Can operate at low voltage.
�½�SC-62(SOT-89)package easy mountaing
E
C
0.53
MAX
B
0.4
0.48 MAX
1.5
3.0
Mark
APPLICATION
For TV tuners,high frequency amplifier.
celluar phone system.
TERMINAL CONNECTOR
Ｅ:
EMITTER
Ｃ:
COLLECTOR
JEITA : SC-62
JEDEC :
Ｂ:
BASE
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Janction temperture
Storage temperture
Ratings
20
3
15
50
400
+150
-55∼+150
unit
V
V
V
mA
mW
℃
℃
Marking
AD
W
Lot
No.
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Symbol
Parameter
Limits
Test conditions
I
CB
=10μA, I
E
=0
I
C
=1mA, R
BE
=∞
V
CB
=15V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=5V, I
C
=20mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=5V, I
E
=-20mA
V
CB
=5V, I
C
=20mA, f=1.8GHz
V
CE
=5V, I
C
=5mA, f=1.0GHz
3.5
30
90
1.0
4.5
9.0
1.5
min
20
15
0.5
10
200
1.5
typ
max
unit
V
V
μA
μA
pF
GHz
dB
dB
V
(BR)CBO
C to B break down voltage
V
(BR)CEO
C to E break down voltage
I
CBO
I
EBO
h
FE
C
ob
f
T
|S
21
|
2
NF
Collector cut off curent
Emitter cut off curent
DC forward current gain
Collector output capacitance
Gain bandwidth product
Insertion power gain
Noise figure
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
