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2SC5397D 参数 Datasheet PDF下载

2SC5397D图片预览
型号: 2SC5397D
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor]
分类和应用:
文件页数/大小: 6 页 / 357 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
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〈transistor〉
2SC5397
For High Frequency Amplify, Middle Frequency Amplify
Silicon NPN Epitaxial Type Micro(Frame type)
DESCRIPTION
2SC5397 is a silicon NPN epitaxial type transistor.
OUTLINE DRAWING
UNIT:mm
TERMINAL CONNECTOR
①:EMITTER
EIAJ: -
②:COLLECTOR
JEDEC: -
③:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
30
4
25
30
450
+150
-55�½�+150
Unit
V
V
V
mA
mW
MARKING
397
□□B
hFE Item
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
I
CBO
I
EBO
hFE
fT
Cob
Ccrb'b
NF
Symbol
Collector cut off current
Emitter cut off current
DC forward current gain ※
Gain bandwidth product
Collector output capacitance
Collector- base time constant
Noise figure
V
V
V
V
V
V
V
Test conditions
= 30V , I
E
= 0mA
= 6V , I
C
= 1mA
= 6V , I
E
= -1mA
= 6V , I
E
= 0mA,f=1MHz
=6V, I E=-1mA, f=31.8MHz
Min
-
-
35
150
-
-
Typ
-
-
-
200
2.0
20
3.0
Max
1
1
300
-
2.7
60
-
Unit
μA
μA
-
MHz
pF
pS
dB
CB
EB
= 4V , I
C
= 0mA
CE
CE
CB
CB
CE
= 6V , I
E
= -0.1mA,f=1kHz,R
G
=2kΩ
※:It
shows hFE classification at right table.
Item
hFE
B
35�½�70
C
55�½�110
D
90�½�180
E
150�½�300
ISAHAYA ELECTRONICS CORPORATION