〈transistor〉
2SC5395
For Low Frequency Power Amplify Application
Silicon NPN Epitaxial Type Micro（Frame type）
DESCRIPTION
2SC5395 is a silicon NPN epitaxial type transistor.
It is designed for low frequency voltage amplify
application.
3.0
OUTLINE DRAWING
4.0
UNIT：mm
13.0MIN
1.0
1.0
0.1
0.45
14.0
2.5
2.5
2.5
①
②
③
TERMINAL CONNECTOR
①：EMITTER
EIAJ： -
②：COLLECTOR
JEDEC： -
③：BASE
MAXIMUM RATINGS（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
C
P
C
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
50
6
50
200
450
+150
-55½+150
Unit
V
V
V
mA
mW
℃
℃
MARKING
395
□□F
hFE Item
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Limits
Parameter
V(
BR
)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
Symbol
C to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain ※
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
Test conditions
I
C
= 100μA , R
BE
= ∞
V
V
V
V
CB
EB
0.4
Min
50
-
-
150
50
-
-
-
-
Typ
-
-
-
-
-
-
200
2.5
-
Max
-
0.1
0.1
500
-
0.3
-
-
15
Unit
V
μA
μA
-
-
V
MHz
pF
dB
= 50V , I
E
= 0mA
= 6V , I
C
= 1mA
= 6V , I
C
= 0.1mA
= 6V , I
E
= -10mA
= 6V , I
E
= 0mA,f=1MHz
= 6V , I
C
= 0mA
CE
CE
I
C
= 100mA , I
B
= 10mA
V
V
V
CE
CB
CE
= 6V , I
E
= -0.1mA,f=1kHz,R
G
=2kΩ
※：It
shows hFE classification at right table.
Item
hFE
E
150½300
F
250½500
ISAHAYA ELECTRONICS CORPORATION
7.5MAX
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
