〈SMALL-SIGNAL TRANSISTOR〉
2SC3928
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
2SC3928 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
2.8
1.90
0.95 0.95
①
②
③
0.4
0½0.1
0.65
OUTLINE DRAWING
2.8
1.5
0.65
Unit½½
.
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max
●Excellent linearity of DC forward gain.
1.1
0.13
0.8
●Super mini package for easy mounting
APPLICATION
For Hybrid IC, small type machine low frequency voltage
Amplify application.
TERMINAL ONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
JEITA:SC-59
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
50
50
6
100
200
+150
-55½+150
Unit
V
V
V
mA
mW
℃
℃
MARKING
H Q
Type name
hFE Item
P
C
T
j
T
stg
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
※: It shows hFE classification at right table.
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
I
C
=100μA ,R
V
V
V
V
CB
EB
BE
Test conditions
=∞
Limits
Min
50
-
-
120
70
-
-
-
Item
hFE
Q
120½270
Typ
-
-
-
(※)
-
-
200
2.0
R
180½390
Max
-
0.5
0.5
560
-
0.3
-
-
Unit
V
μA
μA
=50V, I
E
=0mA
=4V, I
C
=0mA
=6V, I
C
=1mA
=6V, I
C
=0.1mA
=6V, I
E
=-10mA
=6V, I
E
=0mA,f=1MHz
CE
CE
I
C
=30mA ,I
B
=1.5mA
V
V
CE
V
MHz
pF
S
270½560
CB
ISAHAYA ELECTRONICS CORPORATION