2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
300
COLLECTOR DISSIPATION Pc(mW)
250
200
150
100
50
0
0
50
100
AMBIENT TEMPERATURE Ta(℃)
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
10000
-100
IB=-500uA
IB=-400uA
COMMON EMITTER OUTPUT
Ta=25℃
COLLECTOR CURRENT IC(mA)
-80
IB=-300uA
-60
IB=-200uA
-40
IB=-100uA
-20
IB=0uA
-0
150
-0
-2
-4
-6
-8
COLLECTOR TO EMITTER VOLTAGE VCE(V)
-10
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
500
DC FORWARD CURRENT GAIN hFE(-)
VCE=-10V
GAIN BAND WIDTH PRODUCT fT(MHz)
400
Ta=25℃
VCE=-20V
1000
25℃
85℃
300
200
100
-40℃
100
10
-0.1
0
-1
-10
-100
COLLECTOR CURRENT IC(mA)
-1000
1
10
100
EMITTER CURRENT IE(mA)
1000
COMMON EMITTER TRANSFER
-500
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
VCE=-10V
COLLECTOR CURRENT IC(mA)
-400
85℃
100
COLLECTOR OUTPUT CAPACITANCE VS.
COLLECTOR TO BASE VOLTAGE
Ta=25℃
IE=0
f=1MHz
-300
10
-200
25℃
-40℃
-100
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
BASE TO EMITTER VOLTAGE VBE(V)
-1.2
1
0.1
1
10
COLLECTOR TO BASE VOLTAGE VCB(V)
100
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
