2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DC FORWORD CURRENT GAIN
VS. COLLECTOR CURRENT
1000
VCE=-10V
Ta=100℃
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1000
IC/IB=10/1
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE(sat)[mV]
Ta=75℃
FORWORD CURRENT GAIN hFE
100
Ta=25℃
Ta=-25℃
Ta=-40℃
-100
Ta=100℃
Ta=75℃
Ta=25℃
10
-10
Ta=-25℃
Ta=-40℃
1
-1
-10
-100
COLLECTOR CURRENT IC[mA]
-1000
-1
-1
-10
-100
COLLECTOR CURRENT IC[mA]
-1000
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-10
BASE TO EMITTER SATURATION VOLTAGE
VBE(sat)[V]
IC/IB=10/1
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
400
350
300
250
200
150
100
50
0
Ta=25℃
VCE=-20V
-1
Ta=-40℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=100℃
-0.1
-1
-10
-100
COLLECTOR CURRENT IC[mA]
-1000
GAIN BAND WIDTH PRODUCT fT[MHz]
1
10
100
EMITTER CURRENT IE[mA]
1000
COLLECTOR OUTPUT CAPATITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
Ta=25℃
IE=0A
f=1MHz
COLLECTOR DISSIPATION
VS. AMBIENT TEMPERATURE
250
COLLECTOR DISSIPATION Pc[mW]
200
10
150
100
1
50
0.1
-0.1
0
-1
-10
COLLECTOR TO BASE VOLTAGE VCB[V]
-100
0
25
50
75
100
125
AMBIENT TEMPERATURE Ta[℃]
150
ISAHAYA ELECTRONICS CORPORATION
20050621
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
