〈SMALL-SIGNAL TRANSISTOR〉
2SA2026
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
2SA2026 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
0.5
2.5
1.5
0.5
OUTLINE DRAWING
Unit：�½��½�
0.95
①
②
③
● Small collector to emitter saturation voltage.
VCE(sat)=-0.5V max
●Super mini package for easy mounting
1.1
0.16
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
0.8
0.95
FEATURE
2.9
1.9
JEITA：SC-59
TERMINAL CONNECTER
①：BASE
Ratings
-300
-300
-7
-100
150
＋125
-55∼＋125
Unit
V
V
V
mA
mW
℃
℃
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
②：EMITTER
③：COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to B break down voltage
E to Bbreak down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
VCE(sat)
fT
Cob
Test conditions
I
C
=-50μA ,I
E
=0
I
E
=-50μA ,I
C
=0
I
C
=-1mA ,R
V
V
V
CB
EB
BE
0∼0.1
0.4
Limits
Min
-300
-7
-300
-
-
50
-
-
-
Typ
-
-
-
-
-
-
-
40
3.5
Max
-
-
-
-0.5
-0.5
305
-0.5
-
-
V
MHz
pF
Unit
V
V
V
μA
μA
=∞
=--300V, I
E
=0mA
=-5V, I
C
=0mA
=-10V, I
C
=-10mA
=-6V, I
E
=10mA
=-6V, I
E
=0,f=1MHz
CE
I
C
=-100mA ,I
B
=-10mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
