<
SMALL-SIGNAL TRANSISTOR
>
2SA1235A
2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS（Ｔ�½�＝２５℃）
Symbol
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｐ
Ｃ
Ｔ�½�
Ｔ�½��½��½�
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter
voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
2SA1235A
-60
-6
-50
200
200
200
+150
-55�½�+150
450
2SA1602A
-60
2SA1993
-50
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parame
ter
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
Ｉ
EＢＯ
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
C to E break down voltage
2SA1993
Test conditions
I
C
=-100μA，R
BE
=∞
2SA1235A,2SA1602A
Min
-50
E
E
Limits
Typ
Max
-0.1
-0.1
-0.1
500
Unit
V
μA
μA
－
－
－
V
MHz
pF
dB
V
CB
=-50V，I
V
CB
=-60V，I
=0
=0
150
�½�
ＦＥ
*
�½�
ＦＥ
Ｖ
ＣＥ（�½��½��½�）
�½�
Ｔ
Cob
NF
V
EB
=-6V，I
V
CE
=-6V，I
2SA1993
C
=0
C
=-1mA
2SA1235A,2SA1602A
V
CE
=-6V，I
C
=-0.1mA
50
90
-0.3
200
4.0
20
Noise figure
E
F
I
C
=-100mA，I
B
=-10mA
V
CE
=-6V，I
E
=10mA
V
CB
=-6V，I
E
=0,f=1MHz
V
CE
=-6V，I
E
=0.3mA,f=100Hz,R
G
=10�½�Ω
*：
It shows hFE classification in below table.
�½�FE
2SA1235A
2SA1602A
2SA1993
150�½�300
250�½�500
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
