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2SA1603A 参数 Datasheet PDF下载

2SA1603A图片预览
型号: 2SA1603A
PDF下载: 下载PDF文件 查看货源
内容描述: 低频AMPLIFY申请PNP硅外延型(超级迷你型) [FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 2 页 / 130 K
品牌: ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
 浏览型号2SA1603A的Datasheet PDF文件第2页  
〈SMALL-SIGNAL TRANSISTOR〉
2SA1603A
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
DESCRIPTION
2SA1603A is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
0.425
2.1
1.25 0.425
OUTLINE DRAWING
Unit:�½��½�
0.65
● Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
0.9
0.7
0.15
0.65
FEATURE
2.0
1.30
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA:SC-70
TERMINAL CONNECTER
①:BASE
Ratings
-60
-50
-6
-150
200
+150
-55�½�+150
Unit
V
V
V
mA
mW
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
O
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
②:EMITTER
③:COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
I
C
=-100μA ,R
V
V
V
V
CB
EB
0�½�0.1
Test conditions
BE
0.3
Limits
Min
-50
-
-
120
70
-
-
-
Typ
-
-
-
-
-
-
200
2.5
Max
-
-0.1
-0.1
560
-
-0.3
-
-
V
MHz
pF
Unit
V
μA
μA
=∞
=--60V, I
E
=0mA
=-6V, I
C
=0mA
=-6V, I
C
=-1mA
=-6V, I
C
=-0.1mA
=-6V, I
E
=10mA
=-6V, I
E
=0,f=1MHz
CE
CE
I
C
=-30mA ,I
B
=-1.5mA
V
V
CE
CB
※) It shows hFE classification in below table.
Item
�½�FE
Item
120~270
180~390
270~560
ISAHAYA ELECTRONICS CORPORATION