〈SMALL-SIGNAL TRANSISTOR〉
2SA1365
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
2SA1235 is a super mini silicon NPN epitaxial type
transistor designed with high collector current,small Vce(sat).
Complementary with 2SC3440.
.
OUTLINE DRAWING
Unit：½½
FEATURE
●Low collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting.
●High collector current I
CM
=-1A
●High gain band width product
fT=180MHz typ
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
Note)
The dimension without tolerance represent central value
.
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
EBO
V
CEO
I
I
CM
C
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Peak Collector current
Collector current
Collector dissipation (Ta=25℃)
Junction temperature
Storage temperature
Ratings
-25
-4
-20
-1
-700
200
※350
＋125
-55½＋125
Unit
V
V
V
A
mA
mW
℃
℃
P
C
T
j
T
stg
※
package mounted on substrate.
TYPE NAME
hFE ITEM
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain band width product
※） It shows hFE classification in below table
Marking
hFE
AE
150 to 300
AF
250 to 500
AG
400 to 800
.
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
VCE(sat)
fT
Test conditions
I
C
=-10μA , I
E
=0
I
E
=-10μA , I
C
=0
I
C
=-100μA ,R
V
V
V
CB
EB
BE
Limits
Min
-25
-4
-20
-
-
150
-
100
Typ
-
-
-
-
-
-
-0.2
180
Max
-
-
-
-1
-1
800
-0.5
-
Unit
V
V
V
μA
μA
=∞
=-25V, I
E
=0
=-2V, I
C
=0
=-4V, I
C
=-100mA
=-6V, I
E
=10mA
CE
I
C
=-500mA ,I
B
=-25mA
V
CE
V
MHz
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
