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T40HFL60S10 参数 Datasheet PDF下载

T40HFL60S10图片预览
型号: T40HFL60S10
PDF下载: 下载PDF文件 查看货源
内容描述: 快恢复二极管 [FAST RECOVERY DIODES]
分类和应用: 整流二极管快恢复二极管局域网快速恢复二极管
文件页数/大小: 13 页 / 212 K
品牌: INFINEON [ Infineon ]
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T..HFL Series  
Bulletin I27107 rev. A 09/97  
Thermal and Mechanical Specifications  
Parameters  
T40HFL T70HFL T85HFL Units Conditions  
TJ  
Tstg  
Junctionoperatingtemp.  
-40to125  
-40to150  
oC  
oC  
Storage temperature range  
RthJC Max.internalthermal  
resistancejunctiontocase  
RthC-S Thermalresistance, case  
toheatsink  
0.85  
0.53  
0.46  
K/W Permodule,DCoperation  
Mountingsurfaceflat,smoothandgreased.  
K/W  
0.2  
Permodule  
T
Mounting  
Baseto  
1.3±10%  
Nm M3.5mountingscrews(2)  
torque±10% heatsink  
BusbartoTerminal  
Non-lubricated threads  
Nm M5screwsterminals;non-lubricatedthreads  
3±10%  
54 (19)  
D-56  
wt  
Approximateweight  
Casestyle  
g (oz) See outline table  
T-MODULE  
(2) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the  
spread of the compound  
R Conduction  
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)  
Sinusoidal conduction @ TJ max.  
Rectangular conduction @ TJ max.  
Devices  
Units  
180o  
0.06  
0.05  
0.04  
120o  
0.08  
0.06  
0.05  
90o  
60o  
30o  
180o  
0.05  
0.04  
0.03  
120o  
0.08  
0.06  
0.05  
90o  
60o  
30o  
T40HFL  
T70HFL  
T85HFL  
0.10  
0.08  
0.06  
0.14  
0.11  
0.09  
0.24  
0.19  
0.15  
0.10  
0.08  
0.07  
0.15  
0.12  
0.09  
0.24 K/W  
0.19  
0.015  
Reverse Recovery Characteristics  
T40HFL  
T70HFL  
T85HFL  
Parameter  
Units  
Conditions (*)  
S02 S05 S10 S02 S05 S10 S02 S05 S10  
trr Maximum reverse  
recovery time  
TJ = 25 °C, -diF/dt = 100A/µs  
IF = 1 A to VR = 30V  
70 110 270 70 110 270 80 120 290 ns  
200 500 1000 200 500 1000 200 500 1000 ns  
TJ = 25 °C, -diF/dt = 25A/µs  
IFM = π x rated IF(AV),VR = -30 V  
Qrr Maximum reverse  
recovered charge  
TJ = 25 °C, -diF/dt = 100A/µs  
IF = 1 A to VR = 30V  
0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6  
0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5  
µC  
µC  
TJ = 25 °C, -diF/dt = 25A/µs  
IFM = π x rated IF(AV)VR = -30 V  
(*) Tested on LEM 300A Diodemeter Tester  
3
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