MBRD650CTPbF, MBRD660CTPbF
Bulletin PD-21097 rev. B 08/06
Voltage Ratings
Part number
MBRD650CTPbF
MBRD660CTPbF
VR
Max. DC Reverse Voltage (V)
50
60
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
Value
Units
Conditions
IF(AV) Max. AverageForward(PerLeg)
Current*SeeFig.5 (PerDevice)
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent *SeeFig.7
3.0
6
A
50%dutycycle@TC =128°C, rectangularwaveform
490
75
5μs Sineor3μsRect.pulse
Following any rated
load condition and with
rated VRRM applied
A
10msSineor6msRect. pulse
EAS Non-Repet.Aval.Energy (PerLeg)
6
mJ
A
TJ = 25°C, IAS =1Amp,L=12mH
IAR
Repetitive Avalanche Current
(PerLeg)
0.6
Currentdecayinglinearlytozeroin1μsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
Electrical Specifications
Parameters
Value Units
Conditions
VFM Max. Forward Voltage Drop
0.7
0.9
V
V
V
@
@
@
3A
6A
3A
TJ = 25 °C
TJ = 125 °C
VR = rated VR
(Per Leg) * See Fig. 1
(1)
0.65
0.85
0.1
15
V
@
6A
IRM
Max. Reverse Leakage Current
mA TJ = 25 °C
mA TJ = 125 °C
(Per Leg) * See Fig. 2
(1)
CT
LS
Typ. Junction Capacitance (Per Leg)
Typical Series Inductance (Per Leg)
145
5.0
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/μs (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
TJ
Max. JunctionTemperatureRange (*) -40to150
°C
°C
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance (PerLeg)
-40to150
6
3
°C/W DC operation
*SeeFig.4
Junction toCase
(PerDevice)
RthJA Max. ThermalResistanceJunction
to Ambient
80
°C/W
wt
Approximate Weight
CaseStyle
0.3(0.01) g(oz.)
D-Pak
Similar to TO-252AA
Device Marking
MBRD660CT
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
2
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