IRLML6402
1000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
10
I
D
= -3.7A
V
DS
=-10V
800
-V
GS
, Gate-to-Source Voltage (V)
8
C, Capacitance(pF)
Ciss
600
6
400
4
200
Coss
Crss
2
0
1
10
100
0
0
3
6
FOR TEST CIRCUIT
SEE FIGURE 13
9
12
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
SD
, Reverse Drain Current (A)
-I
D
, Drain Current (A)
I
10us
10
100us
10
T
J
= 150
°
C
1ms
1
10ms
1
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
0.1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF [ INTERNATIONAL RECTIFIER ]
