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IRLML6401PBF 参数 Datasheet PDF下载

IRLML6401PBF图片预览
型号: IRLML6401PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用: 晶体晶体管开关脉冲光电二极管
文件页数/大小: 8 页 / 188 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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IRLML6401PbF
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
100
VGS
-7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
TOP
-I D, Drain-to-Source Current (A)
10
-I D, Drain-to-Source Current (A)
10
1
1
-1.0V
-1.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.0
2.0
-I D , Drain-to-Source Current
)
T J = 25°C
10.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -4.3A
T J = 150°C
1.5
1.0
1.0
0.5
VDS = -12V
0.1
1.0
1.5
2.0
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V GS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3