IRFZ48N
20
16
12
8
3500
I
D
= 32A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
V
V
V
= 44V
= 27V
= 11V
iss
gs
gd ,
gd
DS
DS
DS
C
= C
gd
3000
2500
2000
1500
1000
500
rss
C
= C + C
oss
ds
C
iss
C
oss
4
C
FOR TEST CIRCUIT
SEE FIGURE 13
rss
0
0
1
10
100
0
20
40
60
80
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100
10
1
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.2
0.7
1.2
1.7
2.2
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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