IRFZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 17.5 mΩ VGS = 10V, ID = 25A
2.0
19
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 55V, VGS = 0V
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 63
––– ––– 14
––– ––– 23
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
60 –––
44 –––
45 –––
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
S
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1470 –––
––– 360 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 530ꢀ150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
49
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
integral reverse
p-n junction diode.
160
S
(Body Diode)
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 63 95
––– 170 260
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
ns
Qrr
ton
nC di/dt = 100A/µs
Notes:
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀThis is a typical value at device destruction and represents
operation outside rated limits.
Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
This is a calculated value limited to TJ = 175°C .
2
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