IRFZ44VZS_L
3000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
VGS, Gate-to-Source Voltage (V)
ID= 34A
VDS= 48V
VDS= 30V
VDS= 12V
2500
16
C, Capacitance (pF)
2000
Ciss
1500
12
8
1000
4
FOR TEST CIRCUIT
SEE FIGURE 13
500
Coss
Crss
0
1
10
100
0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1.0
T J = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
0.1
0.2
0.6
1.0
1.4
1.8
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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