IRFZ44VPbF
20
16
12
8
4000
I =
D
51A
V
C
= 0V,
f = 1 MHZ
V
V
V
= 48V
= 30V
= 12V
GS
DS
DS
DS
= C + C , C SHORTED
is
gs
gd ds
C
= C
rss
gd
C
= C + C
oss
ds gd
3000
2000
1000
0
Ciss
4
Coss
Crss
0
0
20
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100
10
1
°
T = 25 C
J
100us
1ms
1
10ms
°
T = 25 C
C
J
°
T = 175 C
V
= 0 V
Single Pulse
GS
0.1
0.2
1
10
100
1000
0.7
1.2
1.7
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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