IRFR/U5305PbF
2500
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -16A
D
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= -44V
= -28V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
2000
1500
1000
500
0
C
iss
C
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
V
GS
= 0V
Single Pulse
A
10
1
A
100
0.4
0.8
1.2
1.6
2.0
1
10
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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