1000
IRFP4868PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 175°C
TJ = 25°C
100
1msec
100µsec
10msec
10
10
1
V GS = 0V
0.1
0.0
0.5
1.0
1.5
V SD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
DC
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-to-Drain Diode
Forward Voltage
70
60
ID, Drain Current (A)
V (BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
370
360
350
340
330
320
310
300
290
280
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Id = 5mA
50
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
20.0
5000
Fig 10.
Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP
11A
20A
BOTTOM 42A
15.0
Energy (µJ)
4000
3000
10.0
2000
5.0
1000
0.0
-50
0
50
100 150 200 250 300 350
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical Coss Stored Energy
4
www.irf.com
© 2012 International Rectifier
Fig 12.
Maximum Avalanche Energy vs. Drain Current
October 30, 2012
IRF [ INTERNATIONAL RECTIFIER ]
