IRFP4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200
–––
–––
3.0
–––
170
21
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 46A e
mΩ
25
VDS = VGS, ID = 250µA
VGS(th)
–––
-13
–––
–––
–––
–––
–––
70
5.0
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
49
––– mV/°C
VDS = 200V, VGS = 0V
20
1.0
µA
mA
nA
V
V
V
DS = 200V, VGS = 0V, TJ = 125°C
GS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
98
VDS = 25V, ID = 46A
DD = 100V, ID = 46A, VGS = 10Ve
gfs
Qg
Qgd
tst
S
V
–––
–––
100
nC
Gate-to-Drain Charge
23
–––
–––
VDD = 160V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
570
910
–––
–––
EPULSE
Energy per Pulse
VDS = 160V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 4600 –––
VDS = 25V
ƒ = 1.0MHz,
Coss
Crss
Output Capacitance
–––
–––
–––
–––
460
91
–––
–––
–––
–––
pF
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 160V
Coss eff.
LD
360
5.0
D
S
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
13
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
240
–––
Max.
140
33
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltageꢀc
Avalanche Currentꢀd
EAR
VDS(Avalanche)
IAS
–––
39
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
65
A
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
260
TJ = 25°C, IS = 46A, VGS = 0V e
TJ = 25°C, IF = 46A, VDD = 50V
di/dt = 100A/µs e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
100
430
1.3
150
640
V
ns
nC
Qrr
2
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