IRFL9014
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-60 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.059 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.50
-2.0 ––– -4.0
Ω
V
S
VGS = -10V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = -25V, ID = 1.1A
VDS = -60V, VGS = 0V
Forward Transconductance
1.3
––– –––
––– ––– -100
––– ––– -500
––– ––– -100
––– ––– 100
––– ––– 12
––– ––– 3.8
––– ––– 5.1
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
V
DS = -48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
VGS = 20V
ID =-6.7A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS =-48V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
63 –––
9.6 –––
VDD = -30V
ID = -6.7A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24 Ω
31
–––
RD = 4.0 Ω, See Fig. 10
D
Betweenlead,6mm(0.25in)
LD
InternalDrainInductance
–––
4.0 –––
nH
from package and center
G
of die contact.
LS
InternalSourceInductance
–––
6.0 –––
S
Ciss
Coss
Crss
Input Capacitance
––– 270 –––
––– 170 –––
VGS = 0V
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
–––
31 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -1.8
A
G
ISM
Pulsed Source Current
(Body Diode)
integralreverse
––– ––– -14
S
p-njunctiondiode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
ForwardTurn-OnTime
––– ––– -5.5
––– 80 160
––– 0.096 0.19
V
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, IF =-6.7A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -6.7A, di/dt ≤90A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
VDD=-25V, starting TJ = 25°C, L =50 mH
RG = 25Ω, IAS = -1.8A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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