IRFL014NPbF
350
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 1.7A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
V
= 44V
= 28V
= 11V
DS
DS
DS
= C
gd
300
250
200
150
100
50
= C + C
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
A
A
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
T = 150°C
J
T = 25°C
J
1ms
10ms
T
T
= 25°C
= 150°C
A
J
Single Pulse
V
= 0V
GS
A
0.1
0.1
A
100
0.4
0.6
0.8
1.0
1.2
1.4
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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