PD- 95146
IRFB4710PbF
IRFS4710PbF
IRFSL4710PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Motor Control
l
Uninterrutible Power Supplies
l
Lead-Free
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
V
DSS
100V
R
DS(on)
max
0.014Ω
I
D
75A
TO-220AB
IRFB4710
D
2
Pak
IRFS4710
TO-262
IRFSL4710
Max.
75
53
300
3.8
200
1.4
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Notes
through
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
are on page 11
Typ.
–––
0.50
–––
–––
Max.
0.74
–––
62
40
Units
°C/W
www.irf.com
1
04/22/04
IRF [ INTERNATIONAL RECTIFIER ]
