PD - 96030
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
l
IRF9540NSPbF
IRF9540NLPbF
V
DSS
= -100V
R
DS(on)
= 117mΩ
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF9540NS/L
P-Channel
Lead-Free
D
G
S
I
D
= -23A
D
Description
Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.
D
G
D
S
G
D
S
D
2
Pak
IRF9540NSPbF
G
D
TO-262
IRF9540NLPbF
S
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Gate
Drain
Max.
-23
-14
-92
3.1
110
0.9
± 20
84
-14
11
-13
-55 to + 150
300 (1.6mm from case )
Source
Units
A
c
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
c
d
Thermal Resistance
Parameter
R
θJC
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
R
θJA
Typ.
Max.
1.1
40
Units
°C/W
www.irf.com
g
–––
–––
1
09/30/05
IRF [ INTERNATIONAL RECTIFIER ]
