IRF8308MPbF
IRF8308MTRPbF
l
l
l
l
l
l
l
l
l
l
PD -97671
RoHs Compliant Containing No Lead and Bromide
V
DSS
V
GS
R
DS(on)
R
DS(on)
Low Profile (<0.7 mm)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Optimized for High Frequency Switching
28nC
8.2nC 3.5nC
34nC
20nC
1.8V
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
MX
DirectFET ISOMETRIC
Typical values (unless otherwise specified)
DirectFET Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
8
Typical R DS (on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
30
±20
27
21
150
212
12
21
12
10
8
6
4
2
0
0
20
40
60
ID= 21A
VDS = 24V
VDS= 15V
A
mJ
A
ID = 27A
6
4
2
0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
TJ = 125°C
TJ = 25°C
80
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.051mH, R
G
= 25Ω, I
AS
= 21A.
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1
5/4/11
IRF [ INTERNATIONAL RECTIFIER ]
