PD - 95864
IRF7842
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Secondary Synchronous Rectification
for Isolated DC-DC Converters
l
Synchronous
Fet for Non-Isolated
DC-DC Converters
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max
Qg (typ.)
33nC
40V 5.0m:@V
GS
= 10V
A
A
D
D
D
D
S
S
S
G
1
8
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
40
± 20
18
14
140
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 9
www.irf.com
1
4/26/04
IRF [ INTERNATIONAL RECTIFIER ]
