IRF7822PbF
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
6
I
D
=
15A
V
DS
= 24V
5
1.5
V
GS
, Gate-to-Source Voltage (V)
4
1.0
2
0.5
1
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
0
0
10
20
30
40
50
T
J
, Junction Temperature (
°
C)
Q
G
, Total Gate Charge (nC)
Fig 1.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100000
RDS(on) , Drain-to -Source On Resistance (Ω )
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3.0
4.0
5.0
6.0
7.0
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
C, Capacitance(pF)
10000
Ciss
ID = 15A
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VGS, Gate -to -Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs.
Drain-to-Source Voltage
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