IRF7805/IRF7805A
Electrical Characteristics
Parameter
IRF7805
IRF7805A
Min Typ Max Min Typ Max Units
Conditions
Drain-to-Source
V(BR)DSS 30
–
–
30
–
–
V
VGS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source
on Resistance*
RDS(on)
9.2
11
9.2
11 mΩ VGS = 4.5V, ID = 7A
Gate Threshold Voltage* VGS(th) 1.0
1.0
V
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
Drain-Source Leakage IDSS
Current*
30
30
µA
150
150
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current*
IGSS
±100
±100 nA
VGS = ±12V
Total Gate Charge*
Qg
22
31
22
31
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
Pre-Vth
Qgs1
3.7
3.7
Gate-Source Charge
Post-Vth
Qgs2
1.4
1.4
nC
Gate-Source Charge
Gate to Drain Charge
Qgd
6.8
6.8
8.2
Switch Charge*
(Qgs2 + Qgd)
QSW
8.2 11.5
Output Charge*
Gate Resistance
Turn-on DelayTime
RiseTime
Qoss
Rg
30
1.7
16
20
38
16
36
30
1.7
16
20
38
16
36
VDS = 16V, VGS = 0
Ω
td(on)
tr
VDD = 16V
ID = 7A
ns
Turn-off DelayTime
FallTime
td (off)
tf
Rg = 2Ω
VGS = 4.5V
Resistive Load
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
1.2 1.2
Conditions
Diode Forward
Voltage*
VSD
Qrr
V
IS = 7A, VGS = 0V
Reverse Recovery
Chargeꢀ
88
55
88
55
nC di/dt = 700A/µs
VDS = 16V, VGS = 0V, IS = 7A
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
Reverse Recovery
Charge (with Parallel
Schotkky)ꢀ
Qrr(s)
Notes:
ꢀ
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Measured at VDS < 100mV.This approximates actual operation of a synchronous rectifier.
Typ = measured - Qoss
Devices are 100% tested to these parameters.
2
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