IRF7805ZPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
ΔΒ
V
Δ
VDSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
64
5.5
7.0
–––
6.8
8.7
V
GS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
VDS = VGS, ID = 250μA
mΩ
VGS(th)
Gate Threshold Voltage
2.25
V
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
- 4.7 ––– mV/°C
IDSS
–––
–––
–––
–––
–––
18
1.0
150
100
-100
–––
27
μA VDS = 24V, VGS = 0V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
VGS = -20V
gfs
Qg
VDS = 15V, ID = 12A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
4.7
1.6
6.2
5.5
7.8
10
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
nC VGS = 4.5V
ID = 12A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Fig. 16
Qsw
Qoss
Output Charge
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.0
11
2.1
–––
–––
–––
–––
Ω
V
DD = 15V, VGS = 4.5V
10
ID = 12A
td(off)
tf
Turn-Off Delay Time
Fall Time
14
ns Clamped Inductive Load
3.7
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2080 –––
VGS = 0V
–––
–––
480
220
–––
–––
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
72
12
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
ISM
–––
–––
120
(Body Diode)
Diode Forward Voltage
p-n junction diode.
VSD
trr
–––
–––
–––
–––
29
1.0
44
30
V
T = 25°C, I = 12A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 12A, VDD = 15V
J F
Qrr
ton
di/dt = 100A/μs
20
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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November 20, 2013
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