PD-96024
IRF7707PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
V
DSS
-20V
R
DS(on)
max
22mΩ@V
GS
= -4.5V
33mΩ@V
GS
= -2.5V
I
D
-
7.0A
-
6.0A
Description
HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
1
2
3
4
1=
2=
3=
4=
D
S
S
G
D
8
7
G
6
S
8=
7=
6=
5=
D
S
S
D
5
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-7.0
-5.7
-28
1.5
1.0
0.01
±12
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
www.irf.com
1
01/04/06
IRF [ INTERNATIONAL RECTIFIER ]
