IRF7425PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= -4.5V)
-20
8.2
V
S
1
2
3
4
8
7
A
D
D
D
D
R
DS(on) max
(@V
GS
= -2.5V)
mΩ
13
87
-15
nC
A
S
S
G
6
5
Q
g (typical)
I
D
(@T
A
= 25°C)
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7425PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7425PbF-1
IRF7425TRPbF-1
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
1
©
2013 International Rectifier
November 20, 2013
IRF [ INTERNATIONAL RECTIFIER ]
