IRF7413
100000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
Crss
Coss
= Cgd
= C + Cgd
ds
12
ID= 7.2A
VGS , Gate-to-Source Voltage (V)
10
8
6
4
2
0
10000
VDS= 24V
VDS= 15V
VDS= 6.0V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
100
10
1
10
100
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
T J = 150°C
10.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1.0
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100µsec
1msec
10msec
100
1000
T J = 25°C
0.1
0.4
0.6
0.8
VGS = 0V
1.0
1.2
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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