IRF7413ZPbF
14
2.5
VGS(th) Gate threshold Voltage (V)
12
ID, Drain Current (A)
10
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
1.5
ID = 250µA
1.0
0.5
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
2
τ
3
τ
4
τ
4
1
Ri (°C/W)
1.8556
2.4927
25.570
20.340
P
DM
t
1
τi
(sec)
0.000337
0.012752
0.691000
21.90000
τ
1
0.1
Ci=
τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
+T
A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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