PD - 96112
IRF7413QPbF
l
l
l
l
l
l
l
l
HEXFET
®
Power MOSFET
A
A
D
D
D
D
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
S
S
S
G
1
2
3
4
8
7
V
DSS
= 30V
R
DS(on)
= 0.011Ω
6
5
Top View
Description
Specifically designed for Automotive applications, these HEXFET
®
Power MOSFET's in SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of these Automotive qualified HEXFET
Power MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power applications.
This surface mount SO-8 can dramatically reduce board space
and is also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
E
AS
dv/dt
T
J,
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energency
Peak Diode Recovery dv/dt
Max
30
± 20
13
9.2
58
2.5
0.02
260
5.0
-55 to +150
Units
V
A
W
mW/°C
mJ
V/ns
°C
c
e
d
Junction and Storage Temperature Range
Thermal Resistance Ratings
Symbol
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
h
gh
Parameter
Typ
–––
–––
Max
20
50
Units
°C/W
www.irf.com
1
07/23/07
IRF [ INTERNATIONAL RECTIFIER ]
