IRF7403PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
30
1.0
8.4
Typ.
0.024
10
37
42
40
2.5
4.0
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.022
V
GS
= 10V, I
D
= 4.0A
Ω
0.035
V
GS
= 4.5V, I
D
= 3.4A
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 15V, I
D
= 4.0A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
57
I
D
= 4.0A
6.8
nC V
DS
= 24V
18
V
GS
= 10V, See Fig. 6 and 12
V
DD
= 15V
I
D
= 4.0A
ns
R
G
= 6.0Ω
R
D
= 3.7Ω, See Fig. 10
nH
pF
D
Between lead tip
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
G
S
1200
450
160
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
52
93
3.1
A
34
1.0
78
140
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.0A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
4.0A, di/dt
≤
180A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.