IRF7402
1200
10
1000
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
I
D
= 3 .8A
V
D S
= 16 V
8
C , Capacitance (pF)
C
iss
800
C
oss
600
6
4
400
C
rss
2
200
0
1
10
100
A
0
0
4
8
12
FO R TE S T CIR C U IT
S E E FIG U R E 9
16
20
24
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse D rain C urrent (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 15 0°C
T
J
= 2 5°C
1
I
D
, Drain Current (A)
100
100us
10
1ms
0.1
0.4
0.8
1.2
1.6
V
G S
= 0V
2.0
A
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
10ms
2.4
100
V
S D
, S ourc e-to-D rain V oltage (V )
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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