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IRF7402PBF 参数 Datasheet PDF下载

IRF7402PBF图片预览
型号: IRF7402PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET㈢功率MOSFET [HEXFET㈢ Power MOSFET]
分类和应用:
文件页数/大小: 8 页 / 184 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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IRF7402PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
6.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.024 ––– V/°C Reference to 25°C, I
D
= 1mA
0.035
V
GS
= 4.5V, I
D
= 4.1A
0.050
V
GS
= 2.7V, I
D
= 3.5A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 10V, I
D
= 1.9A
––– 1.0
V
DS
= 16V, V
GS
= 0V
µA
––– 25
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
––– 100
V
GS
= 12V
nA
––– -100
V
GS
= -12V
14
22
I
D
= 3.8A
2.0 3.0
nC V
DS
= 16V
6.3 9.5
V
GS
= 4.5V, See Fig. 6 and 12
5.1 –––
V
DD
= 10V
47 –––
I
D
= 3.8A
ns
24 –––
R
G
= 6.2Ω
32 –––
R
D
= 2.6Ω
650 –––
V
GS
= 0V
300 –––
pF
V
DS
= 15V
150 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
51
69
2.5
A
54
1.2
77
100
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 3.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.8A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
I
SD
3.8A, di/dt
96A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Pulse width
300µs; duty cycle
2%.
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601
2
www.irf.com