IRF7309
P-Channel
2.0
1.5
1.0
0.5
0.0
100
I
= -3.0A
D
T = 25°C
J
TJ = 150°C
10
VDS = -15V
20µs PULSE WIDTH
V
= -10V
GS
1
A
A
4
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 14. Typical Transfer Characteristics
Fig 15. Normalized On-Resistance
Vs. Temperature
20
16
12
8
1000
I
V
= -3.0A
= -24V
V
C
C
C
= 0V,
f = 1MHz
D
DS
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
= C + C
800
600
400
200
0
ds
gd
C
C
iss
oss
C
4
rss
FOR TEST CIRCUIT
SEE FIGURE 22
0
A
A
1
10
100
0
5
10
15
20
25
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 16. Typical Capacitance Vs. Drain-to-
Fig 17. Typical Gate Charge Vs. Gate-to-
Source Voltage
Source Voltage
152