PD - 96135
IRF7309QPbF
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
HEXFET
®
Power MOSFET
D1
D1
D2
D2
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
7
N-Ch
V
DSS
30V
P-Ch
-30V
3
4
6
5
R
DS(on)
0.050Ω 0.10Ω
P-CHANNEL MOSFET
Description
Top View
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
www.irf.com
1
10/24/07
IRF [ INTERNATIONAL RECTIFIER ]
