IRF7304
1500
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C, Capacitance (pF)
C
iss
1000
C
oss
C
rss
500
0
1
10
100
A
-V
DS
, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs. Drain-to-Source Voltage
10
-V
GS
, Gate-to-Source Voltage (V)
8
-I
SD
, Reverse Drain Current (A)
I
D
= -2.2A
V
DS
= -16V
100
10
6
T
J
= 150°C
T
J
= 25°C
4
1
2
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 12
15
20
25
A
0.1
0.3
0.6
0.9
1.2
V
GS
= 0V
A
1.5
Q
G
, Total Gate Charge (nC)
-V
SD
, Source-to-Drain Voltage (V)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
130