IRF7303
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
30
–––
–––
–––
1.0
5.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.032 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.050
V
GS
= 10V, I
D
= 2.4A
Ω
––– 0.080
V
GS
= 4.5V, I
D
= 2.0A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 15V, I
D
= 2.4A
––– 1.0
V
DS
= 24V, V
GS
= 0V
µA
––– 25
V
DS
= 24V, V
GS
= 0V, T
J
= 125 °C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= - 20V
––– 25
I
D
= 2.4A
––– 2.9
nC V
DS
= 24V
––– 7.9
V
GS
= 10V, See Fig. 6 and 12
6.8 –––
V
DD
= 15V
21 –––
I
D
= 2.4A
ns
22 –––
R
G
= 6.0Ω
7.7 –––
R
D
= 6.2Ω, See Fig. 10
D
4.0
6.0
520
180
72
–––
nH
–––
–––
–––
–––
Between lead tip
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
G
S
pF
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 2.5
showing the
A
G
integral reverse
––– ––– 20
p-n junction diode.
S
––– ––– 1.0
V
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
––– 47
71
ns
T
J
= 25°C, I
F
= 2.4A
––– 56
84
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
2.4A, di/dt
≤
73A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
IRF [ INTERNATIONAL RECTIFIER ]
