IRF7105
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
25
-25
1.0
-1.0
Typ. Max.
0.030
-0.015
0.083 0.10
0.14 0.16
0.16 0.25
0.30 0.40
3.0
-3.0
4.3
3.1
2.0
-2.0
25
-25
±100
9.4 27
10
25
1.7
1.9
3.1
2.8
7.0 20
12
40
9.0 20
13
40
45
90
45
90
25
50
37
50
4.0
6.0
330
290
250
210
61
67
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
= 0.50A
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 3.5A
V
DS
= -15V, I
D
= -3.5A
V
DS
= 20V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V,
V
DS
= 20V, V
GS
= 0V, T
J
= 55°C
V
DS
= -20V, V
GS
= 0V, T
J
= 55°C
V
GS
= ± 20V
N-Channel
I
D
= 2.3A, V
DS
= 12.5V, V
GS
= 10V
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total GateCharge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
P-Channel
I
D
= -2.3A, V
DS
= -12.5V, V
GS
= -10V
N-Channel
V
DD
= 25V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 25Ω
P-Channel
V
DD
= -25V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 25Ω
Between lead , 6mm (0.25in.)from
package and center of die contact
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
ns
nH
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
2.0
-2.0
A
14
-9.2
1.2
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
V
-1.2
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
36
54
N-Channel
ns
69 100
T
J
= 25°C, I
F
= 1.3A, di/dt = 100A/µs
41
75
P-Channel
nC
T
J
= 25°C, I
F
= -1.3A, di/dt = 100A/µs
90 180
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
3.5A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.3A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
2
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